DocumentCode
3522405
Title
Mechanism of electrical passivation of Si surfaces with quinhydrone
Author
Opila, Robert L. ; Yang, Dan ; Kotulak, Nicole ; Costello, Luke ; Chhabra, Bhumika
Author_Institution
Univ. of Delaware, Newark, DE, USA
fYear
2012
fDate
3-8 June 2012
Abstract
The ability of quinhydrone/methanol solutions to electrically passivate silicon surfaces with respect to minority carrier recombination has been confirmed. The p-benzoquinon has been found to be the active component of quinhydrone. It is the presence of ketones on opposite sides of the ring that acts to passivate the surface, although the exact mechanism of passivation is not understood. The time dependence of the passivation suggests that it includes more than merely repairing damage on hydrogen terminated surfaces.
Keywords
elemental semiconductors; minority carriers; passivation; silicon; solar cells; Si; electrically passivate silicon surfaces; hydrogen terminated surfaces; minority carrier recombination; p-benzoquinon; photovoltaic technology; quinhydrone-methanol solutions; solar cell; surface electrical passivation mechanism; time dependence; Charge carrier lifetime; Methanol; Passivation; Photovoltaic cells; Silicon; Substrates; benzoquinone; hydrogen-terminated; quinhydrone; silicon; surface passivation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6318123
Filename
6318123
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