DocumentCode
3522447
Title
Single-crystalline-like germanium thin films on glass substrates
Author
Selvamanickam, Venkat ; Jian, C. ; Xiong, X. ; Majkic, G. ; Galtsyan, E.
Author_Institution
Dept. of Mech. Eng. & Texas Center for Supercond., Univ. of Houston, Houston, TX, USA
fYear
2012
fDate
3-8 June 2012
Abstract
Single-crystalline-like germanium films have been demonstrated on inexpensive glass substrates (quartz). Ion Beam Assisted Deposition (IBAD) was employed to achieve biaxial crystallographic texture in MgO deposited on quartz substrates. Using intervening epitaxial oxide buffer layers, single-crystalline-like germanium films have been grown by magnetron sputtering. In-spite of significant lattice mismatch and structural mismatch, epitaxial growth was achieved in all layers. All thin films in this work were deposited by reel-to-reel processing. In-plane texture better than 5° has been measured in the germanium film. A Hall mobility value of 107 cm2/Vs was attained in 400 nm thick germanium films on glass substrates.
Keywords
glass; semiconductor thin films; solar cells; sputter deposition; thin films; Ge; IBAD; MgO; biaxial crystallographic texture; glass substrates; in-plane texture; intervening epitaxial oxide buffer layers; ion beam assisted deposition; lattice mismatch; magnetron sputtering; quartz substrates; reel-to-reel processing; single-crystalline-like germanium films; single-crystalline-like germanium thin films; structural mismatch; Indexes; Milling; Molecular beam epitaxial growth; RNA; epitaxy; germanium; glass; mobility; quartz;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6318125
Filename
6318125
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