Title :
Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate
Author :
Wang, W. ; Leung, K.K. ; Fong, W.K. ; Wang, S.F. ; Hui, Y.Y. ; Lau, S.P. ; Surya, C.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Hong Kong, China
Abstract :
Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve´s full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92° to 0.37° and from 6.58° to 2.04° respectively, indicating a significant improvement of SnS thin films.
Keywords :
X-ray diffraction; buffer layers; glass; graphene; molecular beam epitaxial growth; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; solar cells; thin film devices; FWHM; GaAs; GaAs(100) substrate; HXRD; MBE; SEM; SnS thin film; SnS-C; XRD rocking curve; full width at half maximum; graphene buffer layer; high resolution X-ray diffraction; molecular beam epitaxy; monosulfide thin film; scanning electron microscopy; soda lime glass; temperature 400 degC; Buffer layers; Gallium arsenide; Glass; Substrates; Gallium arsenide; X-ray diffraction; graphene; molecular beam epitaxy; scanning electron microscopy;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318130
