DocumentCode :
3522855
Title :
Thin film active matrix organic electroluminescent display development
Author :
Lungu, George ; Fuller, Lynn
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
fYear :
1997
fDate :
20-23 Jul 1997
Firstpage :
165
Lastpage :
168
Abstract :
An active organic electroluminescent display is being developed in a university environment. The device is a 64×32 pixel array. Each pixel consists of an organic electroluminescent (EL) diode integrated with a poly-silicon thin film transistors (TFT). This paper describes the design, the layout, the fabrication process, and characteristics of the thin film transistors used. A novel structure of high voltage vertical silicon thin film transistor has been discovered. The characteristics of these transistors are briefly presented here. The electric and spectral EL of the stand alone organic diodes are also shown here
Keywords :
MISFET; electroluminescent displays; elemental semiconductors; organic compounds; silicon; thin film devices; thin film transistors; 2048 pixel; 32 pixel; 64 pixel; HV vertical Si TFT; Si; active organic electroluminescent display; fabrication process; high voltage thin film transistor; layout; organic EL diodes; organic electroluminescent diode; polysilicon TFT; thin film active matrix EL display; Active matrix organic light emitting diodes; Atmospheric measurements; Current measurement; Detectors; Electroluminescent devices; Plasma displays; Plasma temperature; Thin film transistors; Voltage measurement; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
ISSN :
0749-6877
Print_ISBN :
0-7803-3790-5
Type :
conf
DOI :
10.1109/UGIM.1997.616717
Filename :
616717
Link To Document :
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