DocumentCode :
3522888
Title :
Growth of Cu2ZnSnSe4 thin films by selenization of magnetron sputtered precursors for solar cells
Author :
Kuo, Shou-Yi ; Yang, Jui-Fu ; Lai, Fang-I ; Lin, Chun-lung
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2012
fDate :
3-8 June 2012
Abstract :
Precursors of the Cu2ZnSnSe4 (CZTSe) absorber were deposition on Mo/glass substrate by radio-frequency (RF) magnetron sputtering at room temperature. The precursors were converted into CZTSe absorber by annealing in the selenium vapors at the substrate temperature of 550°C. CZTSe films have been characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, photo luminescence (PL), energy dispersive spectrometer (EDS), and solar simulator. It was found that the structural and optical properties of CZTSe films. The p-type CZTSe absorber shows a peak below 0.9 eV at room temperature. Solar cells with the AZO/ZnO/CdS/CZTSe/Mo showed the best conversion efficiency of 1.78% for 0.13 cm2 with Voc= 0.21 V, Jsc= 27.1 mA/cm2, and FF= 31.3%.
Keywords :
Raman spectroscopy; X-ray diffraction; annealing; copper compounds; molybdenum; optical properties; photoluminescence; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; ternary semiconductors; tin compounds; zinc compounds; Cu2ZnSnSe4; EDS; RF magnetron sputtering; Raman spectroscopy; X-ray diffraction; XRD; annealing; conversion efficiency; deposition; efficiency 1.78 percent; energy dispersive spectrometer; magnetron sputtered precursor selenization; molybdenum-glass substrate; optical properties; p-type CZTSe absorber; photoluminescence; radiofrequency magnetron sputtering; room temperature; selenium vapors; solar cells; solar simulator; structural properties; substrate temperature; temperature 550 degC; thin film growth; Abstracts; Annealing; Films; Indexes; Substrates; X-ray scattering; Zinc oxide; CZTSe; photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6318148
Filename :
6318148
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3522888
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