Cu2ZnSn(S,Se)4 thin film prepared from a single-step electrodeposited Cu-Zn-Sn-Se precursor

Cu₂ZnSn(S,Se)₄ thin film has been fabricated by sulfurization of a novel single-step electrodeposited Cu-Zn-Sn-Se precursor. Based on EDX analysis of the precursor film, the atomic percentages of Cu, Zn, Sn and Se measured to be 38.48%, 11.53%, 13.62% and 36.37%, respectively. The A1 Raman mode of Cu₂ZnSnSe₄ was detected from the film which suggests the formation of the quaternary compound during the deposition. Annealing of the precursor film at 550°C under H₂S-gas flow resulted in the formation of crystalline Cu₂ZnSn(S,Se)₄ compound. Photoelectrochemical measurement of the film revealed that the Cu₂ZnSn(S,Se)₄ thus-obtained had a p-type semiconductor photoresponse with the band gap energy of 1.48 eV.