Title :
Zinc diffusion process for GaAs0.6P0.4 red light emitting diode fabrication in an undergraduate laboratory
Author :
Lawrence, David J. ; Heineman, Dawn L.
Author_Institution :
Integrated Sci. & Technol. Program, James Madison Univ., Harrisonburg, VA, USA
Abstract :
The formation of p+-n junctions by zinc diffusion into n-type GaAs0.6P0.4 wafers is described. Processes developed in this work allow experience with chemical vapor deposition and the fabrication of red LEDs in an undergraduate laboratory with minimal student exposure to hazardous chemicals. Electrical and optical characteristics of the resulting LEDs are presented
Keywords :
III-V semiconductors; chemical vapour deposition; diffusion; electronic engineering education; gallium arsenide; gallium compounds; light emitting diodes; p-n junctions; semiconductor doping; student experiments; zinc; CVD; GaAs0.6P0.4 red LED; GaAs0.6P0.4:Zn; LED fabrication; Zn diffusion process; Zn diffusion source films; ZnO; ZnO deposition; chemical vapor deposition; electrical characteristics; n-type GaAsP wafers; optical characteristics; p+-n junction formation; red light emitting diode; undergraduate laboratory; Chemical vapor deposition; Furnaces; Gallium arsenide; Heat treatment; Laboratories; Light emitting diodes; Optical device fabrication; Silicon compounds; Surface treatment; Zinc oxide;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616718
