• DocumentCode
    3523032
  • Title

    Zinc diffusion process for GaAs0.6P0.4 red light emitting diode fabrication in an undergraduate laboratory

  • Author

    Lawrence, David J. ; Heineman, Dawn L.

  • Author_Institution
    Integrated Sci. & Technol. Program, James Madison Univ., Harrisonburg, VA, USA
  • fYear
    1997
  • fDate
    20-23 Jul 1997
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    The formation of p+-n junctions by zinc diffusion into n-type GaAs0.6P0.4 wafers is described. Processes developed in this work allow experience with chemical vapor deposition and the fabrication of red LEDs in an undergraduate laboratory with minimal student exposure to hazardous chemicals. Electrical and optical characteristics of the resulting LEDs are presented
  • Keywords
    III-V semiconductors; chemical vapour deposition; diffusion; electronic engineering education; gallium arsenide; gallium compounds; light emitting diodes; p-n junctions; semiconductor doping; student experiments; zinc; CVD; GaAs0.6P0.4 red LED; GaAs0.6P0.4:Zn; LED fabrication; Zn diffusion process; Zn diffusion source films; ZnO; ZnO deposition; chemical vapor deposition; electrical characteristics; n-type GaAsP wafers; optical characteristics; p+-n junction formation; red light emitting diode; undergraduate laboratory; Chemical vapor deposition; Furnaces; Gallium arsenide; Heat treatment; Laboratories; Light emitting diodes; Optical device fabrication; Silicon compounds; Surface treatment; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
  • Conference_Location
    Rochester, NY
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-3790-5
  • Type

    conf

  • DOI
    10.1109/UGIM.1997.616718
  • Filename
    616718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3523032