DocumentCode :
3523086
Title :
Analysis of saw damage in monocrystalline slurry sawn Si wafers using Raman spectroscopy
Author :
Radet, M. ; Jaffrennou, P. ; Habka, N. ; Penaud, J. ; Lombardet, B.
Author_Institution :
R&D Div., Total Gas & Power, Paris La Défense, France
fYear :
2012
fDate :
3-8 June 2012
Abstract :
In the frame of the PV cost reduction roadmap, the control of the sawing step becomes preponderant that is why reducing the saw damage depth is one of the main challenges. In this work, we analyse the subsurface damage induced by the wafer sawing and estimate the saw damage depth based on structural and spectroscopic analyzes. The structural analysis allowed us to determine the subsurface damage structure while, Raman spectroscopy was used to evaluate their impact on the material quality. We compared chemically and mechanically polished wafer surfaces with slurry sawn as cut wafers in terms of saw damage composition and depth.
Keywords :
Raman spectroscopy; elemental semiconductors; sawing; silicon; solar cells; spectroscopy; PV cost reduction roadmap; Raman spectroscopy; Si; material quality; mechanically polished wafer surfaces; monocrystalline slurry sawn silicon wafers; preponderant; saw damage; saw damage composition; saw damage depth; sawing step control; spectroscopic analysis; subsurface damage; subsurface damage structure; wafer sawing; Face; Indexes; Laser beam cutting; Market research; Stress; Surface cracks; Surface treatment; Raman; saw damage; slurry; wafer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6318156
Filename :
6318156
Link To Document :
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