Silicon nitride deposition process for low cost microelectronics applications

Author

Sanders, Thomas J. ; Caraway, Ed Lee ; Hall, Chris ; Linn, J.H. ; Adkins, Cal ; Deju, Hector ; Buschor, Thomas

Author_Institution

Florida Inst. of Technol., Melbourne, FL, USA

fYear

1997

fDate

20-23 Jul 1997

Firstpage

173

Lastpage

176

Abstract

A new technique for Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride is presented in this paper. This technique involves specially built equipment which allows the use of low temperature, low frequency processing. The results obtained show silicon nitride which has all of the positive characteristics of conventional silicon nitride but with equipment which is much less expensive and very easy to use and maintain

Keywords

dielectric thin films; integrated circuit manufacture; integrated circuit technology; plasma CVD; plasma CVD coatings; silicon compounds; LF low temperature processing; PECVD; Si₃N₄; Si₃N₄ deposition process; chemical vapor deposition; deposition equipment; low cost microelectronics applications; plasma enhanced CVD; Chemical vapor deposition; Costs; Microelectronics; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma temperature; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial

Conference_Location

Rochester, NY

ISSN

0749-6877

Print_ISBN

0-7803-3790-5

Type

conf

DOI

10.1109/UGIM.1997.616719

Filename

616719