Title :
Silicon nitride deposition process for low cost microelectronics applications
Author :
Sanders, Thomas J. ; Caraway, Ed Lee ; Hall, Chris ; Linn, J.H. ; Adkins, Cal ; Deju, Hector ; Buschor, Thomas
Author_Institution :
Florida Inst. of Technol., Melbourne, FL, USA
Abstract :
A new technique for Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride is presented in this paper. This technique involves specially built equipment which allows the use of low temperature, low frequency processing. The results obtained show silicon nitride which has all of the positive characteristics of conventional silicon nitride but with equipment which is much less expensive and very easy to use and maintain
Keywords :
dielectric thin films; integrated circuit manufacture; integrated circuit technology; plasma CVD; plasma CVD coatings; silicon compounds; LF low temperature processing; PECVD; Si3N4; Si3N4 deposition process; chemical vapor deposition; deposition equipment; low cost microelectronics applications; plasma enhanced CVD; Chemical vapor deposition; Costs; Microelectronics; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma temperature; Silicon; Substrates;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616719
