• DocumentCode
    3524132
  • Title

    40Gb/s Ge-on-SOI waveguide photodetectors by selective Ge growth

  • Author

    Tao Yin ; Cohen, Reuven ; Morse, Mike M ; Sarid, Gadi ; Chetrit, Yoel ; Rubin, Daniel ; Paniccia, Mario J

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    2008
  • fDate
    24-28 Feb. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Ge waveguide photodetectors with dimension of 7.4 μm × 50 μm and 4.4 μm × 100 μm demonstrated optical bandwidth of 31.3 GHz and 29.4 GHz, responsivity of 0.89 A/W and 1.16 A/W at 1550 nm, and 40 Gb/s open eye diagrams at -2V.
  • Keywords
    elemental semiconductors; germanium; optical waveguides; photodetectors; silicon; silicon-on-insulator; Ge-Si; Ge-on-SOI waveguide photodetectors; bit rate 40 Gbit/s; open eye diagrams; optical bandwidth; responsivity; selective Ge growth; voltage -2 V; wavelength 1550 nm; Bandwidth; Dark current; Detectors; High speed optical techniques; Loss measurement; Optical surface waves; Optical waveguides; Photodetectors; Propagation losses; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-55752-856-8
  • Type

    conf

  • DOI
    10.1109/OFC.2008.4528351
  • Filename
    4528351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3524132