Influence of absorbed water on electronic transport in organosilicon plasma polymers

Author

Tyczkowski, J. ; Sielski, J.

Author_Institution

Dept. of Phys. Chem., Marburg Univ., West Germany

fYear

1989

fDate

3-6 Jul 1989

Firstpage

177

Lastpage

181

Abstract

Studies of the influence of strongly bound water on electrical properties of plasma-deposited organosilicon films indicate that two types of hopping centers exist in the films. The first type can be destroyed by water molecules and the second is stable. In SiNSi films both types of hopping centers exist, but in SiOSi films only the second type exists. However, in both SiNSi and SiOSi films, water molecules activate initially inactive intrinsic acceptor centers. As a result the electrical conductivity increases in organosilicon films in the presence of absorbed water

Keywords

electrical conductivity of solids; hopping conduction; organic compounds; organic semiconductors; plasma deposited coatings; semiconductor thin films; sorption; absorbed water; electrical conductivity; electrical properties; electronic transport; hopping centres; intrinsic acceptor centres; plasma-deposited organosilicon films; strongly bound water; Conductivity; Electrodes; Electron beams; Humidity; Plasma chemistry; Plasma measurements; Plasma properties; Plasma temperature; Plasma transport processes; Polymer films;

fLanguage

English

Publisher

ieee

Conference_Titel

Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on

Conference_Location

Trondheim

Type

conf

DOI

10.1109/ICSD.1989.69184

Filename

69184