Title :
Analysis of InGaAs/InP Single-Photon Avalanche Diodes With the Multiplication Width Variation
Author :
Kiwon Lee ; Kyounghoon Yang
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
This letter investigates dependence of performances of single-diffused single-photon avalanche photodiodes (SPADs) using a wet recess-etching technique on a multiplication width. Three-types of single-diffused InGaAs/InP planar SPADs with the different multiplication width have been fabricated and analyzed, which have no diffusion depth variation between fabricated devices. The fabricated SPAD with the multiplication width of 1.3 μm shows a low dark count rate (DCR) of 9 kHz with a photon detection efficiency of 17.1% at 240 K. It is found that the DCR is reduced by increasing the multiplication width.
Keywords :
III-V semiconductors; avalanche breakdown; avalanche photodiodes; diffusion; etching; gallium arsenide; indium compounds; optical fabrication; InGaAs-InP; dark count rate; multiplication width variation; photon detection efficiency; single-diffused planar SPAD; single-diffused single-photon avalanche photodiodes; temperature 240 K; wet recess-etching; Absorption; Avalanche photodiodes; Electric fields; Indium gallium arsenide; Indium phosphide; Photonics; Voltage measurement; Dark count rate (DCR); multiplication; photon detection efficiency (PDE); single-photon avalanche photodiode (SPAD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2312022
