Analysis of InGaAs/InP Single-Photon Avalanche Diodes With the Multiplication Width Variation

Author

Kiwon Lee ; Kyounghoon Yang

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

26

Issue

10

fYear

2014

fDate

15-May-14

Firstpage

999

Lastpage

1002

Abstract

This letter investigates dependence of performances of single-diffused single-photon avalanche photodiodes (SPADs) using a wet recess-etching technique on a multiplication width. Three-types of single-diffused InGaAs/InP planar SPADs with the different multiplication width have been fabricated and analyzed, which have no diffusion depth variation between fabricated devices. The fabricated SPAD with the multiplication width of 1.3 μm shows a low dark count rate (DCR) of 9 kHz with a photon detection efficiency of 17.1% at 240 K. It is found that the DCR is reduced by increasing the multiplication width.

Keywords

III-V semiconductors; avalanche breakdown; avalanche photodiodes; diffusion; etching; gallium arsenide; indium compounds; optical fabrication; InGaAs-InP; dark count rate; multiplication width variation; photon detection efficiency; single-diffused planar SPAD; single-diffused single-photon avalanche photodiodes; temperature 240 K; wet recess-etching; Absorption; Avalanche photodiodes; Electric fields; Indium gallium arsenide; Indium phosphide; Photonics; Voltage measurement; Dark count rate (DCR); multiplication; photon detection efficiency (PDE); single-photon avalanche photodiode (SPAD);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2312022

Filename

6767037