DocumentCode :
3524541
Title :
Effective carrier recombination coefficient of 1.3 /spl mu/m strained-layer quantum-well lasers
Author :
Yamamoto, T. ; Odagawa, T. ; Tanaka, K. ; Soda, H.
fYear :
1995
fDate :
10-14 July 1995
Firstpage :
170
Keywords :
Charge carrier lifetime; Indium gallium arsenide; Optical waveguides; Photonic band gap; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1995. Technical Digest. CLEO/Pacific Rim'95., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-2400-5
Type :
conf
DOI :
10.1109/CLEOPR.1995.527093
Filename :
527093
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3524541
بازگشت