GaInAsP/InP quantum-wire lasers

The advancement in the research of GaInAsP/InP 1.5 /spl mu/m wavelength quantum-wire lasers by 2-step organo-metallic vapor-phase-epitaxy and electron-beam-lithography is presented. By using a wet-chemical etching, higher performance as well as narrower material gain spectrum of single-layer quantum-wire lasers over quantum-film lasers was obtained at a temperature below 200 K. In order to realize a high density multiple-layered quantum-wire structure, a low-damage CH/sub 4//H/sub 2/ reactive-ion-etching followed by a wet-cleaning process was developed and was characterized by PL intensity dependence on the wire width. Using this fabrication process, very low threshold current density operation (330 k/cm/sup 2/: @RT) of 5-quantum-well distributed feedback lasers as well as a double-layered quantum-wire laser with the threshold current density lower than the single-layer quantum-wire laser fabricated by the wet-chemical etching was obtained.