DocumentCode :
3524580
Title :
Reduction of turn-on delay time with n-type modulation-doped 1.3-/spl mu/m strained multi-quantum we
Author :
Nakahara, K. ; Tsuchiya, T. ; Uomi, K.
fYear :
1995
fDate :
10-14 July 1995
Firstpage :
171
Keywords :
Charge carrier lifetime; Delay effects; Epitaxial layers; Laser theory; Neodymium; Optical arrays; Quantum well devices; Semiconductor laser arrays; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1995. Technical Digest. CLEO/Pacific Rim'95., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-2400-5
Type :
conf
DOI :
10.1109/CLEOPR.1995.527095
Filename :
527095
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3524580
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