Title :
High-speed and high-power 1.3 /spl mu/m InGaAsP/InP selective proton bombarded buried crescent lasers with optical field attenuation regions
Author :
Zhang, B.J. ; Yi, M.B. ; Song, J.F. ; Gao, D.S. ; Zhu, N.H. ; Wang, W.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
High-speed and high-power InGaAsP/InP selective proton bombarded buried crescent (SPB-BC) lasers with optical field attenuation regions were reported. A CW light output over 115 mW was achieved at room temperature using a 500 /spl mu/m long cavity laser. The 3 dB bandwidth was 8.5 GHz, and the lifetime was about 8.5/spl times/10/sup 5/ hours.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; ion-surface impact; laser beams; laser cavity resonators; optical fabrication; optical modulation; semiconductor lasers; 1.3 mum; 115 mW; 298 K; 500 mum; 8.5 GHz; CW light output; InGaAsP-InP; InGaAsP/InP lasers; bandwidth; cavity laser; high-power laser; high-speed laser; lifetime; optical field attenuation regions; room temperature; selective proton bombarded buried crescent lasers; Bandwidth; Fiber lasers; High speed optical techniques; Indium phosphide; Laser theory; Masers; Optical attenuators; Protons; Semiconductor lasers; Temperature;
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
DOI :
10.1109/APCC.1999.820501
