Title :
High temperature operation of 1.3 /spl mu/m tapered-thickness waveguide lasers with pn current-blocking layers
Author :
Yamamoto, Tsuyoshi ; Kobayashi, Hirohiko ; Watanabe, Takayuki ; Shoji, Hajime ; Akiyama, Suguru ; Uchida, Tom ; Yoneda, Yoshihiro ; Higashi, Toshio ; Okazaki, Niro ; Suzuki, Shinya ; Fujii, Takuya ; Soda, Haruhisa
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
1.3 /spl mu/m tapered-thickness waveguide lasers with pn current-blocking structure were fabricated using reactive ion etching and three-step metalorganic vapor phase epitaxy. Excellent high temperature characteristics as well as narrow beam divergences are demonstrated.
Keywords :
MOCVD; laser beams; optical fabrication; quantum well lasers; sputter etching; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; fabrication; high temperature characteristics; high temperature operation; narrow beam divergences; pn current-blocking layers; reactive ion etching; tapered-thickness waveguide lasers; three-step metalorganic vapor phase epitaxy; waveguide lasers; Costs; Epitaxial growth; Epitaxial layers; Etching; Laser beams; Molecular beam epitaxial growth; Optical waveguides; Power generation; Temperature; Waveguide lasers;
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
DOI :
10.1109/APCC.1999.820502
