Title :
Low CW threshold and high temperature characteristics of 1.3 /spl mu/m modulation doped InAsP-AlGaInAs MQW ACIS lasers
Author :
Shimizu, H. ; Iwai, N. ; Kumada, K. ; Yamanaka, N. ; Mukaihara, T. ; Kasukawa, A.
Author_Institution :
R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
A low CW threshold current (Ith=8.2mA@20/spl deg/C) with high temperature characteristics (T/sub 0/=88 K) has been obtained in 1.3 /spl mu/m InAsP/AlGaInAs n-type modulation doped MQW lasers by using Al-oxide confined inner stripe (ACIS) lasers.
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; indium compounds; laser beams; optical fabrication; optical modulation; quantum well lasers; waveguide lasers; 1.3 mum; 20 C; 8.2 mA; 88 K; Al-oxide confined inner stripe lasers; CW threshold current; InAsP-AlGaInAs; InAsP-AlGaInAs laser; MQW ACIS lasers; high temperature characteristics; low CW threshold characteristics; modulation doped laser; n-type modulation doped MQW lasers; Electrons; Epitaxial layers; Gas lasers; Indium phosphide; Oxidation; Quantum well devices; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
DOI :
10.1109/APCC.1999.820503
