High temperature characteristics of highly strained 1.2 /spl mu/m InGaAs/GaAs quantum well lasers

Author

Chen, Z.B. ; Schlenker, D. ; Koyama, E. ; Miyamoto, T. ; Matsutani, A. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1311

Abstract

We have demonstrated highly strained 1.2 /spl mu/m InGaAs/GaAs double quantum well lasers with excellent temperature characteristics. The threshold current density was as low as 340 A/cm/sup 2/ for a 2 mm long broad-area laser. A record high characteristic temperature of 154 K was obtained up to 140/spl deg/C for a 540 /spl mu/m long ridge waveguide laser.

Keywords

Debye temperature; III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 1.2 mum; 140 C; 154 K; 2 mm; 540 mum; InGaAs-GaAs; InGaAs/GaAs; InGaAs/GaAs quantum well lasers; broad-area laser; double quantum well lasers; high characteristic temperature; high temperature characteristics; highly strained laser; ridge waveguide laser; threshold current density; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Optical materials; Pulse measurements; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820504

Filename

820504