Title :
2.75 GHz low noise 0.35 µm CMOS transimpedance amplifier
Author :
Hammoudi, Escid ; Mokhtar, Attari
Author_Institution :
Lab. of Instrum., USTHB, Algies, Algeria
Abstract :
A low-noise and high-bandwidth Transimpedance Amplifier (TIA) at 2.75 GHz has been implemented in 0.35 µm CMOS technology. The designed amplifier is configured on three identical stages that use an active load. This structure operates at 3.3V power supply voltage, displays a transimpedance gain of 531 Ω, exhibits a gain bandwidth product (GBW) of 1.46 THz×Ω and a low-noise level of about 12.8 pA/√Hz , while operating with a photodiode capacitance of 0.4 pF. The predicted performance is verified using simulations tools with 0.35 µm CMOS AMS parameters.
Keywords :
Bandwidth; CMOS integrated circuits; Capacitance; Cutoff frequency; Gain; Noise; Optical fiber amplifiers;
Conference_Titel :
Control & Automation (MED), 2010 18th Mediterranean Conference on
Conference_Location :
Marrakech, Morocco
Print_ISBN :
978-1-4244-8091-3
DOI :
10.1109/MED.2010.5547749
