• DocumentCode
    3524917
  • Title

    Identification of defective regions in thin-film Si solar cells for new-generation energy devices

  • Author

    Naruse, Yohko ; Matsumoto, Mitsuhiro ; Sekimoto, Takeyuki ; Hishida, Mitsuoki ; Aya, Youichirou ; Shinohara, Wataru ; Fukushima, Atsushi ; Yata, Shigeo ; Terakawa, Akira ; Iseki, Masahiro ; Tanaka, Makoto

  • Author_Institution
    Next-Generation Energy Device Dev. Center, Panasonic Corp., Gifu, Japan
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    We developed a high-conversion-efficiency, a-Si/μc-Si tandem solar module using μc-Si thin film on a Gen. 5 class glass substrate. The stabilized module efficiency was 10.7% (initial module efficiency: 12.0%). We prepared high-performance a-Si/μc-Si tandem solar cells based on our original technology for μc-Si thin films with localized plasma confinement chemical vapor deposition, optical confinement techniques, and laser patterning. To obtain higher conversion efficiency, optical confinement techniques are crucial, especially transparent conductive oxide (TCO) controlling technology. However, high-performance TCO includes steep valleys in the texture structure. Therefore, many defective regions are generated in the deposition of μc-Si thin film that degrade the solar cell performance. In this study we structurally identified these defective regions and propose a new formation model of the defective regions.
  • Keywords
    elemental semiconductors; plasma CVD; silicon; solar cells; thin film devices; Si; TCO controlling technology; defective region identification; efficiency 10.7 percent; efficiency 12.0 percent; high-conversion-efficiency; high-performance tandem solar cells; laser patterning; localized plasma confinement chemical vapor deposition; new-generation energy devices; optical confinement techniques; thin-film solar cells; transparent conductive oxide controlling technology; Charge carrier processes; Chemical vapor deposition; Indexes; Optical films; Photovoltaic cells; Silicon; microstructure; photovoltaic cells; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6318240
  • Filename
    6318240