Title :
Characterization of InGaP heterojunction emitter quantum dot solar cells
Author :
Bittner, Zachary S. ; Forbes, David V. ; Bailey, Christopher G. ; Polly, Stephen J. ; Slocum, Michael A. ; Kerestes, Christopher ; Hubbard, Seth M.
Author_Institution :
NanoPower Res. Lab., Rochester Inst. of Technol., New York, NY, USA
Abstract :
Heterojunction emitter InAs/GaAs quantum dot solar cells (QDSC) with an In0.48Ga0.52P (InGaP) n-type emitter and p-type GaAs base were fabricated along with homojunction nip solar cells in order to enable sub-cell polarity compatibility of InAs/GaAs QDSCs with current state-of-the-art monolithic InGaP/GaAs/Ge triple junction solar cells for space applications and to investigate potential dark current suppression effects and electronic field enhancement effects on carrier collection in InAs/GaAs QDSC. Quantum dot solar cells with one-Sun AM0 open circuit voltages greater than 970 mV were fabricated as compared to a 1.020 V heterojunction emitter `control´ sample. Preliminary testing showed a reduction in short circuit current density from homojunction to heterojunction GaAs solar cells, primarily from changes in reflection and uncollected absorption in the InGaP emitter.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum dots; solar cells; InAs-GaAs-In0.48Ga0.52P; carrier collection; dark current suppression effects; electronic field enhancement effects; heterojunction emitter QDSC; heterojunction emitter control sample; heterojunction emitter quantum dot solar cells; homojunction nip solar cells; monolithic triple junction solar cells; n-type emitter; one-Sun AM0 open circuit voltages; short circuit current density reduction; space applications; subcell polarity compatibility; voltage 1.020 V; Absorption; Gallium arsenide; Heterojunctions; Photovoltaic cells; Photovoltaic systems; Quantum dots; GaAs; Heterojunction; In-GaP; InAs Quantum Dot; Photovoltaics;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318249