DocumentCode :
3525471
Title :
Light-Induced degradation in compensated mc-Si p-type solar cells
Author :
Bernardini, Simone ; Saynova, Desislava ; Binetti, Simona ; Coletti, Gianluca
Author_Institution :
ECN Solar Energy, Petten, Netherlands
fYear :
2012
fDate :
3-8 June 2012
Abstract :
Light-induced degradation (LID) due to boron-oxygen complex formation seriously diminishes the efficiency of p-type solar cells. The influence of dopants concentration, net doping and oxygen on the degradation process is investigated using a large variety of B and P compensated mc-Si ingots. Our experiments indicate that the trend of LID depends on the amounts of interstitial oxygen [Oi] and total boron [B]. No clear dependence was found on the net doping.
Keywords :
boron; semiconductor doping; silicon; solar cells; B; Si; boron-oxygen complex formation; compensated mc-Si p-type solar cells; dopants concentration; interstitial oxygen; light-induced degradation; net doping; Boron; Degradation; Doping; Market research; Materials; Photovoltaic cells; Temperature measurement; boron; degradation; doping; oxygen; photovoltaic cells; silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6318268
Filename :
6318268
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3525471
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