A novel non-uniform two-section DFB semiconductor laser for wavelength tuning

Author

Yanrui, Zhao ; Wei, Wang ; Wanru, Zhuang ; Jingyuan, Zhang ; Zhu Hongliang ; Xiaojie, Wang ; Fan, Zhou ; Chaohua, Ma

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1438

Abstract

A novel wavelength tunable DFB laser with two non-uniform sections is reported. A 4 nm continuous wavelength tuning range and an 11.1 nm discrete wavelength tuning range were achieved using only one control-current, with SMSR over 30 dB. The structure of the non-uniform two-section single-cavity DFB laser was grown by three-step MOCVD epitaxy and the active layer consists of six undoped 8 nm wide InGaAsP quantum wells.

Keywords

III-V semiconductors; MOCVD; diffraction gratings; distributed feedback lasers; frequency modulation; gallium arsenide; gallium compounds; indium compounds; intensity modulation; laser beams; laser cavity resonators; laser feedback; laser modes; laser tuning; optical fabrication; optical modulation; quantum well lasers; waveguide lasers; 8 nm; InGaAsP; InGaAsP quantum wells; SMSR; active layer; continuous wavelength tuning range; control-current; discrete wavelength tuning range; nonuniform sections; nonuniform two-section DFB semiconductor laser; nonuniform two-section single-cavity DFB laser; side mode suppression ratio; three-step MOCVD epitaxy; wavelength tunable DFB laser; wavelength tuning; Chaos; Control systems; Gratings; Laser theory; Laser tuning; Optical tuning; Semiconductor lasers; Tensile strain; Tunable circuits and devices; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820546

Filename

820546