Temperature and bias voltage dependence of the MPPC detectors

Author

Dinu, N. ; Bazin, C. ; Chaumat, V. ; Cheikali, C. ; Para, A. ; Puill, V. ; Sylvia, C. ; Vagnucci, J.F.

Author_Institution

Lab. of Linear Accel., Univ. Paris 11, Orsay, France

fYear

2010

fDate

Oct. 30 2010-Nov. 6 2010

Firstpage

215

Lastpage

219

Abstract

This work reports on the characterization of the Multi-Pixel Photon Counter (MPPC) detectors as a function of the temperature and bias voltage. Devices of 1×1 mm² and 3×3 mm² total area and 50×50 μm² μcell size produced by Hamamatsu Photonics have been studied. The temperature has been varied from -110°C to -50°C using a cryostat cooled by liquid nitrogen and from 0 to 38°C using a climatic chamber. Important electrical parameters of the MPPC detectors as gain, breakdown voltage, quenching resistance, capacitance and dark count rate have been measured.

Keywords

cryostats; nitrogen; photon counting; position sensitive particle detectors; solid scintillation detectors; Hamamatsu photonics; MPPC detectors; bias voltage dependence; climatic chamber; cryostat cooled; dark count rate; electrical parameters; liquid nitrogen; multipixel photon counter; quenching resistance; silicon photomultiplier); temperature 0 degC to 38 degC; Capacitance; Detectors; Junctions; Photonics; Temperature; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE

Conference_Location

Knoxville, TN

ISSN

1095-7863

Print_ISBN

978-1-4244-9106-3

Type

conf

DOI

10.1109/NSSMIC.2010.5873750

Filename

5873750