Title :
Temperature and bias voltage dependence of the MPPC detectors
Author :
Dinu, N. ; Bazin, C. ; Chaumat, V. ; Cheikali, C. ; Para, A. ; Puill, V. ; Sylvia, C. ; Vagnucci, J.F.
Author_Institution :
Lab. of Linear Accel., Univ. Paris 11, Orsay, France
fDate :
Oct. 30 2010-Nov. 6 2010
Abstract :
This work reports on the characterization of the Multi-Pixel Photon Counter (MPPC) detectors as a function of the temperature and bias voltage. Devices of 1×1 mm2 and 3×3 mm2 total area and 50×50 μm2 μcell size produced by Hamamatsu Photonics have been studied. The temperature has been varied from -110°C to -50°C using a cryostat cooled by liquid nitrogen and from 0 to 38°C using a climatic chamber. Important electrical parameters of the MPPC detectors as gain, breakdown voltage, quenching resistance, capacitance and dark count rate have been measured.
Keywords :
cryostats; nitrogen; photon counting; position sensitive particle detectors; solid scintillation detectors; Hamamatsu photonics; MPPC detectors; bias voltage dependence; climatic chamber; cryostat cooled; dark count rate; electrical parameters; liquid nitrogen; multipixel photon counter; quenching resistance; silicon photomultiplier); temperature 0 degC to 38 degC; Capacitance; Detectors; Junctions; Photonics; Temperature; Temperature dependence; Temperature measurement;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-9106-3
DOI :
10.1109/NSSMIC.2010.5873750
