Title :
GaInAsP/InP high index coupled (/spl kappa//sub i/=290 cm/sup -1/) DFB laser with periodic wire-like active regions
Author :
Nakamura, M. ; Nunoya, N. ; Yasumoto, H. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
By using CH/sub 4//H/sub 2/ reactive ion etching and organometallic vapor phase epitaxial regrowth, low threshold current operation (20 mA @stripe width 20 /spl mu/m and cavity length 200 /spl mu/m) of high index coupled (/spl kappa//sub i/=290 cm/sup -1/) distributed feedback lasers with periodic wire-like active regions was successfully obtained.
Keywords :
III-V semiconductors; MOCVD; current density; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser feedback; optical couplers; optical fabrication; quantum well lasers; semiconductor quantum wires; sputter etching; vapour phase epitaxial growth; 20 mA; 20 mum; 200 mum; 290 cm/sup -1/; GaInAsP-InP; GaInAsP/InP; H/sub 2/; cavity length; distributed feedback lasers; high index coupled DFB laser; low threshold current operation; methane/H/sub 2/ reactive ion etching; organometallic vapor phase epitaxial regrowth; periodic wire-like active regions; stripe width; Distributed feedback devices; Etching; Fiber lasers; Gratings; Indium phosphide; Laser feedback; Optical coupling; Optical device fabrication; Semiconductor lasers; Threshold current;
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
DOI :
10.1109/APCC.1999.820551
