Title :
A hybrid silicon evanescent electroabsorption modulator
Author :
Ying-hao Kuo ; Hui-Wen Chen ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGalnAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth over 16 GHz.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor quantum wells; silicon; AlGaInAs; Si; electroabsorption modulator; extinction ratio; high speed modulators; hybrid silicon evanescent modulator; modulation bandwidth; quantum wells; waveguides; Silicon;
Conference_Titel :
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-55752-856-8
DOI :
10.1109/OFC.2008.4528435
