DocumentCode
3525782
Title
2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device
Author
Nakada, T. ; Sato, T. ; Matsuba, Y. ; Sakemura, K. ; Okuda, Y. ; Negishi, N. ; Watanabe, A. ; Yoshikawa, T. ; Ogasawara, K. ; Nanba, M. ; Tanioka, K. ; Egami, N. ; Kobayashi, A. ; Koshida, N.
Author_Institution
Corp. R&D Labs., Pioneer Corp., Tsurugashima, Japan
fYear
2009
fDate
20-24 July 2009
Firstpage
95
Lastpage
96
Abstract
A flat type image sensor consisting of a field emitter array (FEA) and a high-gain avalanche rushing amorphous photoconductor (HARP) target is developed as the low light imaging compact camera. In this paper, the structure and fundamental characteristics of a prototype 2/3-inch HEED-HARP image sensor are described.
Keywords
field emitter arrays; image sensors; photoconducting materials; FEA; HARP; HEED-HARP; electron emission device; field emitter array; high-gain avalanche rushing amorphous photoconductor; image sensor; size 0.67 in; Active matrix technology; Amorphous materials; Cameras; Electron emission; Field emitter arrays; Image sensors; Optical arrays; Photoconductivity; Prototypes; Sensor arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location
Shizuoka
Print_ISBN
978-1-4244-3587-6
Electronic_ISBN
978-1-4244-3588-3
Type
conf
DOI
10.1109/IVNC.2009.5271557
Filename
5271557
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