DocumentCode
3525800
Title
Comparison of approximations for the principal Schottky-Nordheim barrier function v(f)
Author
Forbes, Richard G. ; Deane, Jonathan H B
Author_Institution
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear
2009
fDate
20-24 July 2009
Firstpage
97
Lastpage
98
Abstract
The standard Fowler-Nordheim-type (FN-type) equation, as developed by Murphy and Good and recently reformulated by Forbes and Deane, assumes that tunnelling takes place through a triangular barrier rounded by an image-potential-energy term. This barrier was introduced by Schottky and first used in tunnelling theory by Nordheim. It has therefore been called the Schottky-Nordheim (SN) barrier. For cold field electron emission (CFE) from a bulk metal, the standard FN-type equation gives the emission current density J in terms of the local work-function phi and the barrier field.The mathematical function nu was first defined and correctly calculated by Burgess, Kroemer and Houston in 1953. It has sometimes been called a "special field emission elliptic function", but a better name is the "principal Schottky-Nordheim barrier function", because it applies specifically to tunnelling through a SN barrier.The aim of this note is to demonstrate that, when assessed over the whole range 0 < f < 1, approximation outperforms all previous approximations of equivalent complexity. However, over limited ranges of equation performs slightly less well than approximations customised to fit the exact result over the limited range.
Keywords
Schottky barriers; field emission; tunnelling; Schottky-Nordheim barrier; cold field electron emission; emission current density; principal Schottky-Nordheim barrier function; special field emission elliptic function; standard Fowler-Nordheim-type equation; tunnelling; work function; Context modeling; Current density; Electron emission; Integral equations; Mathematical analysis; Mathematical model; Mathematics; Standards development; Tin; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location
Shizuoka
Print_ISBN
978-1-4244-3587-6
Electronic_ISBN
978-1-4244-3588-3
Type
conf
DOI
10.1109/IVNC.2009.5271558
Filename
5271558
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