• DocumentCode
    3525800
  • Title

    Comparison of approximations for the principal Schottky-Nordheim barrier function v(f)

  • Author

    Forbes, Richard G. ; Deane, Jonathan H B

  • Author_Institution
    Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    The standard Fowler-Nordheim-type (FN-type) equation, as developed by Murphy and Good and recently reformulated by Forbes and Deane, assumes that tunnelling takes place through a triangular barrier rounded by an image-potential-energy term. This barrier was introduced by Schottky and first used in tunnelling theory by Nordheim. It has therefore been called the Schottky-Nordheim (SN) barrier. For cold field electron emission (CFE) from a bulk metal, the standard FN-type equation gives the emission current density J in terms of the local work-function phi and the barrier field.The mathematical function nu was first defined and correctly calculated by Burgess, Kroemer and Houston in 1953. It has sometimes been called a "special field emission elliptic function", but a better name is the "principal Schottky-Nordheim barrier function", because it applies specifically to tunnelling through a SN barrier.The aim of this note is to demonstrate that, when assessed over the whole range 0 < f < 1, approximation outperforms all previous approximations of equivalent complexity. However, over limited ranges of equation performs slightly less well than approximations customised to fit the exact result over the limited range.
  • Keywords
    Schottky barriers; field emission; tunnelling; Schottky-Nordheim barrier; cold field electron emission; emission current density; principal Schottky-Nordheim barrier function; special field emission elliptic function; standard Fowler-Nordheim-type equation; tunnelling; work function; Context modeling; Current density; Electron emission; Integral equations; Mathematical analysis; Mathematical model; Mathematics; Standards development; Tin; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
  • Conference_Location
    Shizuoka
  • Print_ISBN
    978-1-4244-3587-6
  • Electronic_ISBN
    978-1-4244-3588-3
  • Type

    conf

  • DOI
    10.1109/IVNC.2009.5271558
  • Filename
    5271558