Title :
A comparative study of the defect point physics and luminescence of the kesterites Cu2ZnSnS4 and Cu2ZnSnSe4 and chalcopyrite Cu(In,Ga)Se2
Author :
Romero, Manuel J. ; Repins, Ingrid ; Teeter, Glenn ; Contreras, Miguel A. ; Al-Jassim, Mowafak ; Noufi, Rommel
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
In this contribution, we present a comparative study of the luminescence of the kesterites Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) and their related chalcopyrite Cu(In,Ga)Se2 (CIGSe). Luminescence spectroscopy suggests that the electronic properties of Zn-rich, Cu-poor kesterites (both CZTS and CZTSe) and Cu-poor CIGSe are dictated by fluctuations of the electrostatic and chemical potentials. The large redshift in the luminescence of grain boundaries in CIGSe, associated with the formation of a neutral barrier is clearly observed in CZTSe, and, to some extent, in CZTS. Kesterites can therefore replicate the fundamental electronic properties of CIGSe.
Keywords :
II-VI semiconductors; cathodoluminescence; chemical potential; copper compounds; electrostatics; gallium compounds; grain boundaries; indium compounds; solar cells; ternary semiconductors; tin compounds; zinc compounds; Cu2ZnSnS4; Cu2ZnSnSe4; CuInGaSe2; cathodoluminescence; chalcopyrite; chemical potentials; defect point physics; electronic properties; electrostatic; grain boundary; kesterite-based solar cells; luminescence spectroscopy; Electric potential; Fluctuations; Grain boundaries; Luminescence; Photovoltaic cells; Spectroscopy; Temperature measurement; cathodoluminescence; chalcopyrite; kesterite; thin film;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318290
