Arbitrary wavelength-range modulator-integrated DFB lasers on a single wafer for WDM applications

Author

Komatsu, K. ; Muroya, Y. ; Sakata, Y. ; Inomoto, Y.

Author_Institution

ULSI Device Dev., NEC Corp., Shiga, Japan

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1541

Abstract

The fabrication technique of modulator integrated DFB lasers with arbitrary wavelength range in a single wafer is proposed and demonstrated. Devices with a wide wavelength range from 1530 nm to 1610 nm were fabricated using four wafers. It was also confirmed that the wavelength range covered in a wafer could be arbitrary changed.

Keywords

MOCVD; distributed feedback lasers; electro-optical modulation; electroabsorption; electron beam lithography; integrated optics; laser beams; laser feedback; optical fabrication; optical fibre communication; optical transmitters; quantum well lasers; vapour phase epitaxial growth; wavelength division multiplexing; 1530 to 1610 nm; WDM applications; arbitrary wavelength range; arbitrary wavelength-range modulator-integrated DFB lasers; fabrication; fabrication technique; modulator integrated DFB lasers; single wafer; wavelength range; Absorption; Epitaxial growth; Epitaxial layers; Erbium-doped fiber amplifier; Fabrication; Laboratories; Laser applications; National electric code; Photonic band gap; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820578

Filename

820578