DocumentCode :
3526068
Title :
Arbitrary wavelength-range modulator-integrated DFB lasers on a single wafer for WDM applications
Author :
Komatsu, K. ; Muroya, Y. ; Sakata, Y. ; Inomoto, Y.
Author_Institution :
ULSI Device Dev., NEC Corp., Shiga, Japan
Volume :
2
fYear :
1999
fDate :
18-22 Oct. 1999
Firstpage :
1541
Abstract :
The fabrication technique of modulator integrated DFB lasers with arbitrary wavelength range in a single wafer is proposed and demonstrated. Devices with a wide wavelength range from 1530 nm to 1610 nm were fabricated using four wafers. It was also confirmed that the wavelength range covered in a wafer could be arbitrary changed.
Keywords :
MOCVD; distributed feedback lasers; electro-optical modulation; electroabsorption; electron beam lithography; integrated optics; laser beams; laser feedback; optical fabrication; optical fibre communication; optical transmitters; quantum well lasers; vapour phase epitaxial growth; wavelength division multiplexing; 1530 to 1610 nm; WDM applications; arbitrary wavelength range; arbitrary wavelength-range modulator-integrated DFB lasers; fabrication; fabrication technique; modulator integrated DFB lasers; single wafer; wavelength range; Absorption; Epitaxial growth; Epitaxial layers; Erbium-doped fiber amplifier; Fabrication; Laboratories; Laser applications; National electric code; Photonic band gap; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
Type :
conf
DOI :
10.1109/APCC.1999.820578
Filename :
820578
Link To Document :
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