The fabrication of grating for 1.55 /spl mu/m InGaAsP DFB laser array by e-beam lithography

Author

Yue-Bun, E. ; Wong, Prudence W. H.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1545

Abstract

First-order and second-order gratings for the 1.55 /spl mu/m wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO/sub 3/:HBr:H/sub 2/O and reactive ion etching using the gas mixture CH/sub 4/:H/sub 2/:Ar/sub 2/. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; electron beam lithography; etching; gallium arsenide; gallium compounds; indium compounds; laser accessories; laser feedback; optical fabrication; semiconductor laser arrays; sputter etching; 1.55 mum; 200 nm; Ar/sub 2/; DFB laser array; H/sub 2/; H/sub 2/O; HBr; HNO/sub 3/; HNO/sub 3/-HBr-H/sub 2/O; InGaAsP; InGaAsP laser; InGaAsP-InP; InP; InP substrate; PMMA resist; distributed feedback laser; electron beam lithography; fabrication; first-order gratings; gas mixture; grating; methane-H/sub 2/-Ar/sub 2/; reactive ion etching; second-order gratings; wet chemical etching; Argon; Chemical lasers; Gas lasers; Gratings; Indium phosphide; Lithography; Optical arrays; Optical device fabrication; Resists; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820579

Filename

820579