Title :
Laser-micromachining for 3D silicon detectors
Author :
Christophersen, Marc ; Phlips, Bernard F.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
fDate :
Oct. 30 2010-Nov. 6 2010
Abstract :
We laser-micromachined hole arrays into silicon with aspect ratios up to 100:1. Direct laser-drilling and trepanning were used. Since laser-machining leaves a damaged silicon region that is not suitable for detector fabrication, we removed the damaged silicon with an isotropic xenon difluoride etch step. Hole arrays with trepan drilled holes had lower leakage currents. We successfully collected a Co-57 photon spectrum (energy resolution: 3.0 keV FWHM at 122 KeV) with a 3D silicon detector based on trepan-drilled holes. Our results show that silicon laser-machining can be used for 3D detector fabrication with good charge collection properties.
Keywords :
laser beam etching; leakage currents; micromachining; silicon radiation detectors; 3D detector fabrication; 3D silicon detector; Co-57 photon spectrum; aspect ratio; energy resolution; isotropic xenon difluoride etching process; leakage current; silicon laser-machining hole array; silicon region; Detectors; Etching; Laser modes; Semiconductor lasers; Silicon; Three dimensional displays;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-9106-3
DOI :
10.1109/NSSMIC.2010.5873784
