Numerical simulations on capture area of gas molecules for high brightness gas field ion source

Author

Sugiyama, Yasuhiko ; Kobayashi, Yusuke ; Morikawa, Yuuki ; Kajiwara, Kazuo ; Hata, Koichi

Author_Institution

Electr. & Electron. Eng. Div., Mie Univ., Tsu, Japan

fYear

2009

fDate

20-24 July 2009

Firstpage

213

Lastpage

214

Abstract

In order to improve the brightness of gas field ion source (GFIS), numerical simulations of field distribution around the tip apex and the shank were performed taking into account an increase of gas capture area for field ionization. This experiment results of ion current at gas temperature 300K and the calculation results at same condition are compared to confirm the reliability of the calculations. It showed that the experimental results for the emitters with taper half angle of 1.5deg and 14.5deg with a nano-scale protrusion at tip apex indicated good qualitative agreement with calculation. Therefore, it is possible to estimate the ion current which depends on emitter shape for GFIS by using this calculation method.

Keywords

helium; ion sources; numerical analysis; field distribution; gas capture area; gas molecules; helium ions; high brightness gas field ion source; ion current; numerical simulations; taper half angle; tip apex; Brightness; Electron microscopy; Helium; Ion beams; Ion sources; Ionization; Nanotechnology; Numerical simulation; Shape; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International

Conference_Location

Shizuoka

Print_ISBN

978-1-4244-3587-6

Electronic_ISBN

978-1-4244-3588-3

Type

conf

DOI

10.1109/IVNC.2009.5271582

Filename

5271582