Title :
Laser-induced diffusion for radiation detector development
Author :
Christophersen, Marc ; Phlips, Bernard F.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
fDate :
Oct. 30 2010-Nov. 6 2010
Abstract :
Prototyping of three-dimensional integrated circuits requires annealing of silicon junction at temperature below 450 degree C. Laser-annealing is one way to locally anneal a silicon junction. We laser-annealed spin-on-glass diffusion sources and ion-implanted phosphorous junctions. The laser was part of a commercial micro-machining system. We successfully made a laser-annealed ohmic back side contact for a silicon strip detector. An energy resolution of 8.0 keV FWHM at 122 keV was obtained.
Keywords :
integrated circuits; laser beam annealing; micromachining; nuclear electronics; ohmic contacts; position sensitive particle detectors; silicon radiation detectors; energy resolution; ion-implanted phosphorous junction; laser-annealed ohmic back side contact; laser-annealed spin-on-glass diffusion source; laser-induced diffusion; micromachining system; radiation detector; silicon junction annealing process; silicon strip detector; three-dimensional integrated circuit; Annealing; Detectors; Implants; Semiconductor lasers; Silicon; Substrates;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-9106-3
DOI :
10.1109/NSSMIC.2010.5873787
