Title :
Study of vacuum-sealed carbon nanotube field emission display using vacuum micro electron source based on planar gate structure
Author :
Huang, J.X. ; Xu, N.S. ; Deng, S.Z. ; Chen, Jun
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
In this paper, the fabrication of a planar gate field emission display (FED) is studied. In this structure, the carbon nanotubes (CNTs) are confined by insulated layer which helps to reduce the possibility of shorting between CNTs and gate electrodes. Transmission electron microscopy (TEM) is used to study the structure of the CNTs. The cathode current vs. gate voltage characteristics of the fabricated vacuum-scaled planar gate CNT-FED were measured.
Keywords :
carbon nanotubes; field emission displays; nanotube devices; transmission electron microscopy; C; TEM; cathode current; gate electrodes; gate voltage characteristics; insulated layer; planar gate FED; planar gate structure; transmission electron microscopy; vacuum micro electron source; vacuum-sealed carbon nanotube field emission display; Argon; Carbon nanotubes; Cathodes; Electrodes; Electron sources; Fabrication; Flat panel displays; Insulation; Organic materials; Vacuum technology;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271595
