Title :
Low Drive-Current and Wide Temperature Operation of 1.3-μm AlGaInAs-MQW BH-DFB Lasers by Laterally Enhanced Cladding Layer Growth
Author :
Kobayashi, Ryota ; Ito, Akinori ; Kato, Shigeo ; Muroya, Y. ; Koui, T. ; Sakata, Yuji ; Shimizu, J. ; Ishikawa, Seiichiro
Author_Institution :
1st Opt. Semicond. Dept., NEC Electron. Corp. Ltd., Otsu, Japan
Abstract :
Low drive-current and extremely wide temperature (from -45 to 105°C) operation were demonstrated in 10-Gb/s directly-modulated 1.3-μm AlGalnAs-MQW BH-DFB lasers with a new DH structure having a p-InP cladding layer grown by a lateral-growth technique.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; optical modulation; quantum well lasers; AlGaInAs; MQW BH-DFB lasers; bit rate 10 Gbit/s; laterally enhanced cladding layer growth; low drive-current; wavelength 1.3 mum; wide temperature operation; DH-HEMTs; Distributed feedback devices; Gratings; High speed optical techniques; National electric code; Optical devices; Optical feedback; Semiconductor devices; Semiconductor lasers; Temperature;
Conference_Titel :
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-55752-856-8
DOI :
10.1109/OFC.2008.4528482
