Title :
A novel structure for a polarization insensitive contra-directional coupler filter utilizing vertically stacked buried InGaAsP waveguides
Author :
Yazaki, T. ; Horita, M. ; Tanaka, S. ; Matsushima, Y.
Author_Institution :
KDD Kamifukuoka R&D Labs., Saitama, Japan
Abstract :
A novel structure for polarization insensitive contra-directional coupler filter is experimentally demonstrated. The differences of peak wavelength and reflected power between two orthogonal polarizations were as small as 0.03 nm and 0.7 dB, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; optical communication equipment; optical directional couplers; optical fabrication; optical waveguide filters; InGaAsP; orthogonal polarizations; peak wavelength; polarization insensitive contra-directional coupler filter; reflected power; vertically stacked buried InGaAsP waveguides; Birefringence; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical filters; Optical polarization; Optical sensors; Optical waveguides; Semiconductor waveguides; Silicon compounds;
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
DOI :
10.1109/APCC.1999.820613
