DocumentCode
3526616
Title
A novel structure for a polarization insensitive contra-directional coupler filter utilizing vertically stacked buried InGaAsP waveguides
Author
Yazaki, T. ; Horita, M. ; Tanaka, S. ; Matsushima, Y.
Author_Institution
KDD Kamifukuoka R&D Labs., Saitama, Japan
Volume
2
fYear
1999
fDate
18-22 Oct. 1999
Firstpage
1652
Abstract
A novel structure for polarization insensitive contra-directional coupler filter is experimentally demonstrated. The differences of peak wavelength and reflected power between two orthogonal polarizations were as small as 0.03 nm and 0.7 dB, respectively.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; optical communication equipment; optical directional couplers; optical fabrication; optical waveguide filters; InGaAsP; orthogonal polarizations; peak wavelength; polarization insensitive contra-directional coupler filter; reflected power; vertically stacked buried InGaAsP waveguides; Birefringence; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical filters; Optical polarization; Optical sensors; Optical waveguides; Semiconductor waveguides; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location
Beijing, China
Print_ISBN
7-5635-0402-8
Type
conf
DOI
10.1109/APCC.1999.820613
Filename
820613
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