DocumentCode
3526722
Title
Wafer surface treatment for integrating laser diode and optical isolator by direct bonding
Author
Mizumoto, Tetsuya ; Yokoi, Hideki ; Shimizu, Masafumi ; Waniishi, Takashi ; Futakuchi, N. ; Kaida, Noriaki ; Nakano, Yoshiaki
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
2
fYear
1999
fDate
18-22 Oct. 1999
Firstpage
1662
Abstract
GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical isolators; semiconductor lasers; surface treatment; wafer bonding; GaInAsP; GaInAsP surfaces; O/sub 2/; O/sub 2/ plasma activated GaInAsP; contact angle measurement; direct bonding; garnet crystals; hydrophilicity; laser diode; optical isolator; wafer direct bonding; wafer surface treatment; Diode lasers; Garnets; Integrated optics; Isolators; Optical interferometry; Optical surface waves; Plasma measurements; Surface emitting lasers; Surface treatment; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location
Beijing, China
Print_ISBN
7-5635-0402-8
Type
conf
DOI
10.1109/APCC.1999.820618
Filename
820618
Link To Document