Dielectric relaxation study in Tantalum Pentoxide capacitors

Author

Manceau, J.-P. ; Bruyere, S. ; Jeannot, S. ; Sylvestre, A. ; Gonon, P.

Author_Institution

STMicroelectronics, Crolles

fYear

2006

fDate

15-18 Oct. 2006

Firstpage

708

Lastpage

711

Abstract

In this paper MIM (Metal-Insulator-Metal) Ta₂O₅ capacitor has been studied in term of dielectric relaxation over several thicknesses with a low frequency dielectric spectroscopy and current versus time measurement. A Maxwell-Wagner mechanism and resistance degradation has been identified. The resistance degradation follows the Space-Charge-Limited (SCL) theory. These two behaviours have the same activation energy and have been attributed to electrode polarisation mechanism created by mobile charges in the dielectric. Finally according to physical characterization the origin of these defects has been attributed to oxygen vacancies.

Keywords

MIM devices; capacitors; dielectric relaxation; tantalum compounds; MIM capacitor; Maxwell-Wagner mechanism; Ta₂O₅; activation energy; current measurement; dielectric relaxation; dielectric spectroscopy; electrode polarisation mechanism; metal-insulator-metal; mobile charges; oxygen vacancies; resistance degradation; space-charge-limited theory; tantalum pentoxide capacitors; time measurement; Chemical vapor deposition; Degradation; Dielectric measurements; Electrochemical impedance spectroscopy; Electrodes; Frequency; MIM capacitors; Permittivity; Temperature distribution; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation and Dielectric Phenomena, 2006 IEEE Conference on

Conference_Location

Kansas City, MO

Print_ISBN

1-4244-0547-5

Electronic_ISBN

1-4244-0547-5

Type

conf

DOI

10.1109/CEIDP.2006.312030

Filename

4105531