Title :
Dielectric relaxation study in Tantalum Pentoxide capacitors
Author :
Manceau, J.-P. ; Bruyere, S. ; Jeannot, S. ; Sylvestre, A. ; Gonon, P.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
In this paper MIM (Metal-Insulator-Metal) Ta2O5 capacitor has been studied in term of dielectric relaxation over several thicknesses with a low frequency dielectric spectroscopy and current versus time measurement. A Maxwell-Wagner mechanism and resistance degradation has been identified. The resistance degradation follows the Space-Charge-Limited (SCL) theory. These two behaviours have the same activation energy and have been attributed to electrode polarisation mechanism created by mobile charges in the dielectric. Finally according to physical characterization the origin of these defects has been attributed to oxygen vacancies.
Keywords :
MIM devices; capacitors; dielectric relaxation; tantalum compounds; MIM capacitor; Maxwell-Wagner mechanism; Ta2O5; activation energy; current measurement; dielectric relaxation; dielectric spectroscopy; electrode polarisation mechanism; metal-insulator-metal; mobile charges; oxygen vacancies; resistance degradation; space-charge-limited theory; tantalum pentoxide capacitors; time measurement; Chemical vapor deposition; Degradation; Dielectric measurements; Electrochemical impedance spectroscopy; Electrodes; Frequency; MIM capacitors; Permittivity; Temperature distribution; Tin;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 2006 IEEE Conference on
Conference_Location :
Kansas City, MO
Print_ISBN :
1-4244-0547-5
Electronic_ISBN :
1-4244-0547-5
DOI :
10.1109/CEIDP.2006.312030
