Simulation and test of Silicon-on-Diamond sensors for particle detection

Author

Passeri, Daniele ; Morozzi, Arianna ; Servoli, Leonello ; Kanxheri, Keida ; Sciortino, Silvio ; Lagomarsino, Stefano

Author_Institution

Dept. of Eng., Univ. of Perugia, Perugia, Italy

fYear

2015

fDate

18-19 June 2015

Firstpage

44

Lastpage

48

Abstract

A laser bonding technique has been developed recently to create an innovative material based on a silicon/diamond interface. In this work, we propose the development and the application of a numerical model for TCAD simulations of poly-crystalline diamond conceived for Silicon-on-Diamond (SoD) sensors to be used, e.g., as particle detectors in High Energy Physics (HEP) experiments. The model is based on the introduction of an articulated, yet physically based, picture of deep-level defects acting as a recombination centers and/or trap states. The modelling scheme has been validated by comparing the simulation findings with experimental measurements carried out on real devices featuring a thinned CMOS Active Pixel Sensor chip bonded to a poly-crystalline diamond substrate. Eventually, this technique could foster the exploration of innovative semiconductor devices conjugating the properties of diamond substrates and the capabilities of CMOS electronics.

Keywords

CMOS image sensors; bonding processes; chemical vapour deposition; computerised instrumentation; deep levels; defect states; diamond; laser beam applications; numerical analysis; particle detectors; polymer films; silicon; technology CAD (electronics); CMOS electronics; Si-C; TCAD simulation; deep level defect; innovative semiconductor devices; laser bonding technique; numerical model; particle detection; polycrystalline diamond substrate; recombination center; silicon-on-diamond sensors; technology computer aided design; thinned CMOS active pixel sensor chip; trap state; CMOS integrated circuits; Diamonds; Electron traps; Integrated circuit modeling; Numerical models; Silicon; Substrates; CMOS; Sensors; Silicon on Diamond; TCAD;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Sensors and Interfaces (IWASI), 2015 6th IEEE International Workshop on

Conference_Location

Gallipoli

Type

conf

DOI

10.1109/IWASI.2015.7184970

Filename

7184970