Field emission properties of ZnO nanorods grown on various substrates

Author

Park, Eunkyung ; Lee, Jungwoo ; Lee, Donghwan ; Lee, Jongtaek ; Yi, Whikun

Author_Institution

Dept. of Chem., Hanyang Univ., Seoul, South Korea

fYear

2009

fDate

20-24 July 2009

Firstpage

149

Lastpage

150

Abstract

In this paper, ZnO nanorods were synthesized by the hydrothermal process on various substrates such as glass, ITO, p-type porous silicon and n-type porous silicon by dipping in ZnO solution and atomic layer deposition method. The thin films a grown on substrates were washed with deionized water to eliminate residual salts, dried in air, and annealed at 400 degC. Scanning electron microscopy and X-ray diffraction showed their structure and morphology. Field emission properties of the ZnO nanorods were measured in vacuum chamber. .

Keywords

II-VI semiconductors; X-ray diffraction; annealing; atomic layer deposition; crystal growth from solution; elemental semiconductors; field emission; glass; indium compounds; nanofabrication; nanostructured materials; porous semiconductors; scanning electron microscopy; silicon; surface morphology; wide band gap semiconductors; zinc compounds; ITO; Si; X-ray diffraction; ZnO; annealing; atomic layer deposition method; deionized water; dipping; field emission properties; glass substrates; hydrothermal process; n-type porous semiconductor; p-type porous semiconductor; scanning electron microscopy; semiconducting nanorods; surface morphology; temperature 400 C; vacuum chamber; Annealing; Atomic layer deposition; Glass; Indium tin oxide; Morphology; Scanning electron microscopy; Silicon; Transistors; X-ray diffraction; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International

Conference_Location

Shizuoka

Print_ISBN

978-1-4244-3587-6

Electronic_ISBN

978-1-4244-3588-3

Type

conf

DOI

10.1109/IVNC.2009.5271615

Filename

5271615