Title :
Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for the ATLAS electronics upgrade
Author :
Díez, S. ; Ullán, M. ; Grillo, A.A. ; Kierstead, J. ; Kononenko, W. ; Martinez-McKinney, F. ; Newcomer, F.M. ; Rescia, S. ; Ruat, M. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Spieler, H. ; Wilder, M.
Author_Institution :
Inst. de Microelectron. de Barcelona, CSIC, Barcelona, Spain
fDate :
Oct. 30 2010-Nov. 6 2010
Abstract :
Final results for a comprehensive radiation hardness evaluation of a high performance, low cost, 130 nm SiGe BiCMOS technology are presented. After a survey of several available SiGe technologies, one was chosen in terms of performance, power consumption, radiation hardness, and cost and it is presented as a suitable technology for the front-end electronics of the Inner Detector and the Liquid Argon calorimeter. Gamma, neutron and proton irradiations have been performed up to target dose and fluence values, together with ELDRS assessment.
Keywords :
BiCMOS integrated circuits; germanium radiation detectors; nuclear electronics; particle calorimetry; position sensitive particle detectors; radiation hardening (electronics); silicon radiation detectors; ATLAS electronics upgrade; SiGe BiCMOS technology; dose rate; front-end electronics; gamma irradiation effect; liquid argon calorimeter; neutron irradiation effect; power consumption; proton irradiation effect; radiation hardness evaluation; BiCMOS integrated circuits; Neutrons; Performance evaluation; Protons; Radiation effects; Silicon germanium; Transistors;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-9106-3
DOI :
10.1109/NSSMIC.2010.5873828
