DocumentCode
3526949
Title
An industrial method for low-temperature synthesis of large-area films of molybdenum trioxide microbelts and their field emission property
Author
Ban, D.M. ; Xu, N.S. ; Deng, S.Z. ; Jun Chen ; She, J.C.
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2009
fDate
20-24 July 2009
Firstpage
147
Lastpage
148
Abstract
The synthesis and the growth mechanism of MoO3 nanostructures have been investigated. However, it remains a challenge to develop an industrial approach to prepare a large-area film of MoO3 nanostructures in a control manner. Such a film may be used to construct flat-panel displays, photoelectrochromic ldquosmartrdquo window etc. Many synthesis methods reported so far require vacuum conditions and/or high growth temperature. In the present work, we explore the possibility of using a commercial infrared sintering furnace for growth of large-area films of MoO3 microbelts in air and on ITO glass or silicon substrate at low temperature without catalyst. The present result is especially relevant to field emission devices or smart windows because of the glass substrate and the low growth temperature. Our new approach may be very important to the development of a low-cost nano-emitter field emission flat panel display and other large-area devices.
Keywords
cryogenic electronics; flat panel displays; glass; molybdenum compounds; glass substrate; growth mechanism; industrial method; infrared sintering furnace; large-area films; low-temperature synthesis; molybdenum trioxide microbelts; nano-emitter field emission flat panel display; smart windows; vacuum conditions; Displays; Furnaces; Glass; Indium tin oxide; Industrial control; Nanostructures; Semiconductor films; Substrates; Temperature; Windows;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location
Shizuoka
Print_ISBN
978-1-4244-3587-6
Electronic_ISBN
978-1-4244-3588-3
Type
conf
DOI
10.1109/IVNC.2009.5271618
Filename
5271618
Link To Document