• DocumentCode
    3526949
  • Title

    An industrial method for low-temperature synthesis of large-area films of molybdenum trioxide microbelts and their field emission property

  • Author

    Ban, D.M. ; Xu, N.S. ; Deng, S.Z. ; Jun Chen ; She, J.C.

  • Author_Institution
    State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    The synthesis and the growth mechanism of MoO3 nanostructures have been investigated. However, it remains a challenge to develop an industrial approach to prepare a large-area film of MoO3 nanostructures in a control manner. Such a film may be used to construct flat-panel displays, photoelectrochromic ldquosmartrdquo window etc. Many synthesis methods reported so far require vacuum conditions and/or high growth temperature. In the present work, we explore the possibility of using a commercial infrared sintering furnace for growth of large-area films of MoO3 microbelts in air and on ITO glass or silicon substrate at low temperature without catalyst. The present result is especially relevant to field emission devices or smart windows because of the glass substrate and the low growth temperature. Our new approach may be very important to the development of a low-cost nano-emitter field emission flat panel display and other large-area devices.
  • Keywords
    cryogenic electronics; flat panel displays; glass; molybdenum compounds; glass substrate; growth mechanism; industrial method; infrared sintering furnace; large-area films; low-temperature synthesis; molybdenum trioxide microbelts; nano-emitter field emission flat panel display; smart windows; vacuum conditions; Displays; Furnaces; Glass; Indium tin oxide; Industrial control; Nanostructures; Semiconductor films; Substrates; Temperature; Windows;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
  • Conference_Location
    Shizuoka
  • Print_ISBN
    978-1-4244-3587-6
  • Electronic_ISBN
    978-1-4244-3588-3
  • Type

    conf

  • DOI
    10.1109/IVNC.2009.5271618
  • Filename
    5271618