Title :
Low temperature growth of vertically aligned AlN nanocone arrays without catalysts and investigation on their field emission behaviors
Author :
Liu, Fei ; Su, Z.J. ; Mo, F.Y. ; Li, Li ; Huang, Z.Q. ; Chen, J. ; Deng, S.Z. ; Xu, N.S.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
In this paper, vertically AlN nanocone arrays have been successfully fabricated at 550degC. They are all single crystals with a wurtzite structure and grow along [0001] orientation. These AlN nanocones are found to have good field emission behaviors, suggesting they could be excellent cathode nanomaterials in future.
Keywords :
III-V semiconductors; aluminium compounds; field emission; nanofabrication; nanostructured materials; semiconductor growth; wide band gap semiconductors; AlN; cathode nanomaterials; field emission behaviors; nanofabrication; temperature 550 C; vertically aligned nanocone arrays; wurtzite structure; Cathodes; Conducting materials; Flat panel displays; Furnaces; Indium tin oxide; Nanostructured materials; Nanostructures; Physics; Temperature; Thermal conductivity;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271619
