DocumentCode :
3526966
Title :
Annealing effects on depletion voltage and capacitance of Float Zone and Magnetic Czochralski silicon diodes after 800 MeV proton exposure
Author :
Metcalfe, Jessica ; Hoeferkamp, Martin ; Seidel, Sally
Author_Institution :
Dept. of Phys. & Astron., Univ. of New Mexico, Albuquerque, NM, USA
fYear :
2010
fDate :
Oct. 30 2010-Nov. 6 2010
Firstpage :
608
Lastpage :
611
Abstract :
A review of the depletion voltage obtained from capacitance measurements after irradiation and annealing is presented for four types of silicon (Si) diodes: n- and p-type Float Zone (Fz) and Magnetic Czochralski (MCz) silicon. The samples were irradiated with 800 MeV protons to fluences reaching 1.1×1015 neq/cm2 and then annealed in several time steps at 60 °C.
Keywords :
annealing; position sensitive particle detectors; radiation effects; silicon radiation detectors; annealing effects; depletion voltage; float zone; magnetic Czochralski silicon diodes; radiation damage; silicon tracking detectors; Annealing; Capacitance; Capacitance measurement; Protons; Radiation effects; Silicon; Space charge; anneal; depletion voltage; float zone; magnetic Czochralski; radiation damage; silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
ISSN :
1095-7863
Print_ISBN :
978-1-4244-9106-3
Type :
conf
DOI :
10.1109/NSSMIC.2010.5873831
Filename :
5873831
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3526966
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