• DocumentCode
    3526966
  • Title

    Annealing effects on depletion voltage and capacitance of Float Zone and Magnetic Czochralski silicon diodes after 800 MeV proton exposure

  • Author

    Metcalfe, Jessica ; Hoeferkamp, Martin ; Seidel, Sally

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2010
  • fDate
    Oct. 30 2010-Nov. 6 2010
  • Firstpage
    608
  • Lastpage
    611
  • Abstract
    A review of the depletion voltage obtained from capacitance measurements after irradiation and annealing is presented for four types of silicon (Si) diodes: n- and p-type Float Zone (Fz) and Magnetic Czochralski (MCz) silicon. The samples were irradiated with 800 MeV protons to fluences reaching 1.1×1015 neq/cm2 and then annealed in several time steps at 60 °C.
  • Keywords
    annealing; position sensitive particle detectors; radiation effects; silicon radiation detectors; annealing effects; depletion voltage; float zone; magnetic Czochralski silicon diodes; radiation damage; silicon tracking detectors; Annealing; Capacitance; Capacitance measurement; Protons; Radiation effects; Silicon; Space charge; anneal; depletion voltage; float zone; magnetic Czochralski; radiation damage; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
  • Conference_Location
    Knoxville, TN
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-9106-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2010.5873831
  • Filename
    5873831
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3526966