Title :
Cooling effects of field emission from N-type semiconductors
Author :
Chung, M.S. ; Mayer, A. ; Weis, B.L. ; Miskovsky, N.M. ; Cutler, P.H.
Author_Institution :
Dept. of Phys., Univ. of Ulsan, Ulsan, South Korea
Abstract :
In this work, we investigate the cooling effect of field emission from Si and GaN semiconductors. The cooling is made by the energy exchange (i.e. the energy loss of the cathode) Deltaepsiv which is defined the average energies of field and replacement electrons. The calculations of Deltaepsiv are obtained analytically and numerically using the WKB approximation.
Keywords :
III-V semiconductors; WKB calculations; conduction bands; cooling; elemental semiconductors; field emission; gallium compounds; silicon; wide band gap semiconductors; GaN; N-type semiconductors; Si; WKB approximation; cathode; conduction band; cooling effects; energy exchange; energy loss; field emission; replacement electrons; Cathodes; Current density; Electron emission; Electronics cooling; Energy exchange; Energy loss; Gallium nitride; Heating; Physics; Temperature;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271626
