Title :
Electron-wave interference induced by electrons emitted from Pt field emitter fabricated by focused-ion-beam-induced deposition
Author :
Murakami, K. ; Matsuo, T. ; Wakaya, F. ; Takai, M.
Author_Institution :
Center for Quantum Sci. & Technol. under Extreme Conditions, Osaka Univ., Toyonaka, Japan
Abstract :
The development of a coherent-field emitter for electron-wave interferences and its possible application have been investigated in our research. So far, electron-wave interferences induced by electrons emitted from a Pt field emitter fabricated by electron-beam-induced deposition (EBID) were reported. However, the field emission properties and electron-emission patterns of Pt field emitters fabricated by focused-ion beam (FIB)-induced deposition (FIBID) have not been characterized. The resistivity of a Pt nanowire fabricated by EBID was quite high and decreases by three to four orders of magnitude after annealing at 400deg C. On the other hand, the resistivity of Pt nanowire deposited by FIB was very low even without annealing. The Pt field emitter fabricated by FIBID might be, therefore, more suited to the coherent-field emitter. In this study, the characteristics of Pt field emitters fabricated by FIBID and their electron-emission patterns of electron-wave interference were investigated.
Keywords :
annealing; electrical resistivity; electron field emission; electron waveguides; focused ion beam technology; ion beam assisted deposition; nanowires; platinum; Pt; Pt field emitter; Pt nanowire; annealing; coherent-field emitter; electrical resistivity; electron emission patterns; electron-wave interference; field emission properties; focused-ion-beam-induced deposition; temperature 400 C; Annealing; Conductivity; Electron beams; Electron emission; Interference; Microscopy; Shape measurement; Temperature; Tungsten; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271627