Enhancement of ion-induced bending (IIB) phenomenon using a double-layered film for FEA fabrication

We have proposed a simple bending technique for fabricating field emitter arrays (FEAs), based on the ion-induced bending (IIB) effect. In previous studies, we found that the bending angle could be controlled by adjusting the depth of ion irradiation, irrespective of the ion-species, IIB could be applied to various materials deposited by a non-specialized sputtering system. Using this technique, we developed a fabrication process for a molybdenum vertical-thin-film (VTF) field emitter array. The IIB technique is a simple bending technique for FEAs because it provides greater freedom of choice in materials, does not require any specialized equipment, and matches conventional microfabrication processes. It was found that the IIB effect could be enhanced by using a double-layered film method. The required dose could consequently be decreased to less than 5x10¹⁵ cm^-2 in the case of using a heavy element for the cantilever film. This method increases the potential of IIB as a simple fabrication technique for FEA device structures.