• DocumentCode
    3527285
  • Title

    High performance cost effective inverter design — 1200V SPT+ IGBT chip in combination with CAL4 diode and 17mm IGBT module platform

  • Author

    Seng, Daniel ; Wahi, Aseem

  • Author_Institution
    SEMIKRON Elektron. GmbH, Nuremberg
  • fYear
    2006
  • fDate
    19-21 Dec. 2006
  • Firstpage
    74
  • Lastpage
    76
  • Abstract
    SEMIKRON is introducing the 2nd generation of the Soft-Punch-Through (SPT) Isolated Gate Bipolar Transistor (IGBT), the so called SPT+, in its flat 17 mm SEMiXtrade power module packages. For an optimised performance, the CAL 4 (Controlled Axial Lifetime) diode from SEMIKRON, especially designed for the fourth IGBT generation, will be used. This combination of new technologies in the latest power module package shows lower switching and conduction losses in comparison to the former chip generations. These improvements allow cost effective inverter designs together with improved softness from the chip side.
  • Keywords
    insulated gate bipolar transistors; invertors; CAL4 diode; IGBT module platform; SEMiX power module packages; SPT IGBT chip; cost effective inverter design; isolated gate bipolar transistor; voltage 1200 V; Costs; Design optimization; Diodes; Insulated gate bipolar transistors; Inverters; Multichip modules; Packaging; Power electronics; Power generation; Springs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics, 2006. IICPE 2006. India International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4244-3450-3
  • Electronic_ISBN
    978-1-4244-3451-0
  • Type

    conf

  • DOI
    10.1109/IICPE.2006.4685344
  • Filename
    4685344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3527285